Test 2 Syllabus

CSCE 5730: Digital CMOS VLSI Design

Instructor: Dr. Saraju P. Mohanty

NOTE:

· This is closed book and closed text examination.

1. Junction diode structure
2. Diode current
3. Diode capacitances
4. MOS transistor operation
5. MOS transistor I-V characteristics
6. MOS transistor model for manual analysis
7. Source, drain, and equivalent resistance of MOS transistor
8. Different types of capacitances associated with MOS transistor
9. C-V characteristic of MOS transistor
10. Velocity saturation
11. Mobility degradation
12. Channel length modulation
13. Body effect
14. Subthreshold conduction
15. Junction leakage
16. Gate oxide tunneling leakage
17. Operating temperature effects
18. Device geometry effects
19. Latch-up effect
20. Concept of threshold voltage