Test 2 Syllabus

CSCE 5730: Digital CMOS VLSI Design

Instructor: Dr. Saraju P. Mohanty

 

 

NOTE:

·        This is closed book and closed text examination.

 

 

 

  1. Junction diode structure
  2. Diode current
  3. Diode capacitances
  4. MOS transistor operation
  5. MOS transistor  I-V characteristics
  6. MOS transistor model for manual analysis
  7. Source, drain, and equivalent resistance of MOS transistor
  8. Different types of capacitances associated with MOS transistor
  9. C-V characteristic of MOS transistor
  10. Velocity saturation
  11. Mobility degradation
  12. Channel length modulation
  13. Body effect
  14. Subthreshold conduction
  15. Junction leakage
  16. Gate oxide tunneling leakage
  17. Operating temperature effects
  18. Device geometry effects
  19. Latch-up effect
  20. Concept of threshold voltage