Test 3 Syllabus

CSCE 5730: Digital CMOS VLSI Design

Instructor: Dr. Saraju P. Mohanty

NOTE: This is a closed book/text examination. 

1. Source, drain, and equivalent resistance of MOS transistor
2. Different types of capacitances associated with MOS transistor
3. C-V characteristic of MOS transistor
4. Velocity saturation
5. Mobility degradation
6. Channel length modulation
7. Body effect
8. Subthreshold conduction
9. Junction leakage
10. Gate oxide tunneling leakage
11. Operating temperature effects
12. Device geometry effects
13. Capacitance of wire
14. Resistance of wire
15. Inductance of wire
16. Cross talk
17. Elmore delay model
18. Lumped and Distributed RC models
19. Delay definitions
20. Switch-level RC delay models and Estimation